to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation ( http://www.renesas.com ) send any inquiries to http://www.renesas.com/inquiry .
notice 1. all information included in this document is current as of th e date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas electronics products listed herein, please confirm the latest product information with a renesas electronics sales office. also, please pay regular and careful attention to additional and different information to be disclosed by renesas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document . no license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property right s of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . 4. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. you should not use renesas electronics products or the technology de scribed in this document for any purpose re lating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or om issions from the information included herein. 7. renesas electronics products are classified according to the following three quality grades: ?standard?, ?high quality?, an d ?specific?. the recommended applications for each renesas electronics product depends on the product?s quality grade, as indicated below. you must check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application categorized as ?specific? without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intended where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electronics data sheets or data books, etc. ?standard?: computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. ?high quality?: transportation equipment (automobiles, trains, ship s, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specifically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use re nesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of c ontrolled substances, including without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any fo rm, in whole or in part, without prior written consent of renes as electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this document or renesas electronics products, or if you have any other inquiries. (note 1) ?renesas electronics? as used in this document means renesas electronics corporation and also includes its majority- owned subsidiaries. (note 2) ?renesas electronics product(s)? means any product developed or manufactured by or for renesas electronics.
regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
mar. 2002 mitsubishi semiconductor ? triac ? bcr08as low power use non-insulated type, planar passivation type ? t (rms) ..................................................................... 0.8a ? drm ....................................................................... 600v ? fgt ! , i rgt ! , i rgt # .............................................. 5ma ? fgt # ..................................................................... 10ma bcr08as application hybrid ic, solid state relay, control of household equipment such as electric fan ?washing machine, other general purpose control applications symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t a =40 c ? 3 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c mg ratings 0.8 8 0.26 1 0.1 6 1 ?0 ~ +125 ?0 ~ +125 48 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 voltage class 12 (marked ?f? 600 720 unit v v maximum ratings ? 1. gate open. 2 1 3 1 2 3 t 1 terminal t 2 terminal gate terminal 4.40.1 1.50.1 1.60.2 0.40.07 0.8 min 2.50.1 3.90.3 0.4 +0.03 0.05 1 2 3 (back side) outline drawing dimensions in mm sot-89 0.50.07 1.50.1 1.50.1
mar. 2002 symbol i drm v tm v fgt ! v rgt ! v rgt # v fgt # i fgt ! i rgt ! i rgt # i fgt # v gd r th (j-a) (dv/dt) c test conditions t j =125 c, v drm applied t c =25 c, i tm =1.2a, instantaneous measurement t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 t j =125 c unit ma v v v v v ma ma ma ma v c/w v/ s typ. ! @ # $ ! @ # $ ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. mounted on 25mm 25mm t0.7mm ceramic plate with solder. ? 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) mitsubishi semiconductor ? triac ? bcr08as low power use non-insulated type, planar passivation type electrical characteristics parameter repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c = 0.4a/ms 3. peak off-state voltage v d =400v limits min. 0.1 0.5 max. 1.0 2.0 2.0 2.0 2.0 2.0 5 5 5 10 65 10 1 10 1 7 5 3 2 012 10 0 7 5 3 2 345 4 4 t j = 125 c t j = 25 c 10 0 23 5710 1 4 2 23 5710 2 44 6 8 10 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c performance curves ? 4
mar. 2002 10 0 23 10 0 5710 1 23 5710 2 23 5710 3 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 v gm = 10v v gt p gm = 1w p g(av) = 0.1w i gm = 1a v gd = 0.2v i fgt iii i fgt i , i rgt i , i rgt iii maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) maximum transient thermal impedance characteristics transient thermal impedance ( c/w) conduction time (cycles at 60hz) gate characteristics gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 4 0 8 0 120 v rgt i v rgt iii v fgt i v fgt iii typical example 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 4 0 8 0 120 i fgt i i rgt iii i rgt i i fgt iii typical example 2.0 1.6 1.2 0.8 0.4 0 2.00 0.4 0.8 1.2 1.6 360 conduction resistive, inductive loads 160 120 100 60 20 0 1.60 0.2 0.6 1.0 1.4 40 80 140 0.4 0.8 1.2 resistive, inductive loads curves apply regardless of conduction angle natural convection 10 1 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 23 10 2 5710 3 23 5710 4 23 5710 5 junction to ambient junction to case mitsubishi semiconductor ? triac ? bcr08as low power use non-insulated type, planar passivation type
mar. 2002 mitsubishi semiconductor ? triac ? bcr08as low power use non-insulated type, planar passivation type 10 3 7 5 3 2 10 2 7 5 3 2 10 1 100 (%) holding current ( t j = t c ) holding current ( t j = 25 c ) laching current vs. junction temperature laching current (ma) junction temperature ( c) holding current vs. junction temperature junction temperature ( c) repetitive peak off-state current vs. junction temperature junction temperature ( c) breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 c ) commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) 160 100 80 40 20 0 14040 40 60 20 0 20 6 0 8 0 140 100120 60 120 typical example 14040 40 60 20 0 20 6 0 8 0 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 typical example 14040 40 60 20 0 20 6 0 8 0 100 120 23 10 0 5710 1 23 5710 2 23 5710 3 120 0 20 40 60 80 100 140 160 t j = 125 c typical example i quadrant iii quadrant 160 40 0 4 0 8 0 120 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 1 t 2 + , g typical example typical example distribution t 2 + , g + t 2 , g t 2 , g + ? ? ? ? ? typical example t j = 125 c i t = 1a = 500 s v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 c ) typical example 10 1 23 5710 0 10 0 7 5 3 2 23 5710 1 10 1 7 5 3 2 10 1
mar. 2002 gate trigger current vs. gate current pulse width gate current pulse width (s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt i i rgt iii i fgt i i fgt iii typical example mitsubishi semiconductor ? triac ? bcr08as low power use non-insulated type, planar passivation type 6 ? 6 ? 6 ? 6 ? 6v 6v 6v 6v r g r g r g r g a v a v a v a v test procedure 1 test procedure 3 test procedure 2 test procedure 4 gate trigger characteristics test circuits
|
